Silicon nanowire-silver indium selenide heterojunction photodiodes.
Identifieur interne : 000405 ( Main/Exploration ); précédent : 000404; suivant : 000406Silicon nanowire-silver indium selenide heterojunction photodiodes.
Auteurs : RBID : pubmed:23975141Abstract
Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe2) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe2 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe2 thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.
DOI: 10.1088/0957-4484/24/37/375203
PubMed: 23975141
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Silicon nanowire-silver indium selenide heterojunction photodiodes.</title><author><name sortKey="Kulakci, Mustafa" uniqKey="Kulakci M">Mustafa Kulakci</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Middle East Technical University, Ankara, Turkey.</nlm:affiliation><country xml:lang="fr">Turquie</country><wicri:regionArea>Department of Physics, Middle East Technical University, Ankara</wicri:regionArea></affiliation></author><author><name sortKey="Colakoglu, Tahir" uniqKey="Colakoglu T">Tahir Colakoglu</name></author><author><name sortKey="Ozdemir, Baris" uniqKey="Ozdemir B">Baris Ozdemir</name></author><author><name sortKey="Parlak, Mehmet" uniqKey="Parlak M">Mehmet Parlak</name></author><author><name sortKey="Unalan, Husnu Emrah" uniqKey="Unalan H">Husnu Emrah Unalan</name></author><author><name sortKey="Turan, Rasit" uniqKey="Turan R">Rasit Turan</name></author></titleStmt><publicationStmt><date when="2013">2013</date><idno type="doi">10.1088/0957-4484/24/37/375203</idno><idno type="RBID">pubmed:23975141</idno><idno type="pmid">23975141</idno><idno type="wicri:Area/Main/Corpus">000435</idno><idno type="wicri:Area/Main/Curation">000435</idno><idno type="wicri:Area/Main/Exploration">000405</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe2) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe2 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe2 thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">23975141</PMID><DateCreated><Year>2013</Year><Month>08</Month><Day>28</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>37</Issue><PubDate><Year>2013</Year><Month>Sep</Month><Day>20</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Silicon nanowire-silver indium selenide heterojunction photodiodes.</ArticleTitle><Pagination><MedlinePgn>375203</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/24/37/375203</ELocationID><Abstract><AbstractText>Structural and optoelectronic properties of silicon (Si) nanowire-silver indium selenide (AgInSe2) thin film heterojunctions were investigated. The metal-assisted etching method was employed to fabricate vertically aligned Si nanowire arrays. Stoichiometric AgInSe2 films were then deposited onto the nanowires using co-sputtering and sequential selenization techniques. It was demonstrated that the three-dimensional interface between the Si nanowire arrays and the AgInSe2 thin film significantly improved the photosensitivity of the heterojunction diode compared to the planar reference. The improvements in device performance are discussed in terms of interface state density, reflective losses and surface recombination of the photogenerated carriers, especially in the high-energy region of the spectrum.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Kulakci</LastName><ForeName>Mustafa</ForeName><Initials>M</Initials><Affiliation>Department of Physics, Middle East Technical University, Ankara, Turkey.</Affiliation></Author><Author ValidYN="Y"><LastName>Colakoglu</LastName><ForeName>Tahir</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Ozdemir</LastName><ForeName>Baris</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Parlak</LastName><ForeName>Mehmet</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Unalan</LastName><ForeName>Husnu Emrah</ForeName><Initials>HE</Initials></Author><Author ValidYN="Y"><LastName>Turan</LastName><ForeName>Rasit</ForeName><Initials>R</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>08</Month><Day>23</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2013</Year><Month>8</Month><Day>23</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2013</Year><Month>8</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2013</Year><Month>8</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>8</Month><Day>27</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/24/37/375203</ArticleId><ArticleId IdType="pubmed">23975141</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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